DocumentCode :
385769
Title :
Monolithic Gallium Arsenide I-Q Demodulator
Author :
O´Neil, V.P. ; Ryan, C. ; Weitzel, C.
Volume :
84
Issue :
1
fYear :
1984
fDate :
30803
Firstpage :
14
Lastpage :
18
Abstract :
The monolithic gallium arsenide demodulator described herein demodulates the in-phase (I) and quadrature (Q) components of two signal channels on carriers identical in frequency but in quadrature phase relationships. The present demodulator is shown to be closely matched because of close matching of component parameters achieved by fabricating the entire demodulator on a single gallium arsenide chip. The demodulator can be developed to, replace diode ring demodulators to obtain the following advantages.
Keywords :
Circuits; Demodulation; Etching; FETs; Frequency; Gallium arsenide; Government; Research and development; Resistors; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
Type :
conf
DOI :
10.1109/MCS.1984.1113618
Filename :
1113618
Link To Document :
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