Title :
Design and Process Sensitivity of a Two Stage 6-18 GHz Monolithic Feedback Amplifier
Author :
Bean, John M. ; Nelson, Stephen R. ; Williams, Ralph E.
Abstract :
The design of a 6-18 GHz, two stage monolithic feedback amplifier is discussed, and the critical process and FET parameters are identified. Variations in circuit performance experienced during a pilot production run are correlated with the predictions of a sensitivity analysis. The critical parameters are substrate height, GaAs sheet resistivity, gate-source capacitance, transconductance, and drain-source resistance. Measured results show the importance of substrate height and sheet resistivity in the control of gain flatness.
Keywords :
Capacitance; Circuit optimization; Conductivity; FETs; Feedback amplifiers; Gallium arsenide; Process design; Production; Sensitivity analysis; Transconductance;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1985.1113635
