DocumentCode
385790
Title
A High Gain, Monolithic Distributed Amplifier Using Cascode Active Elements
Author
LaRue, R. ; Bandy, S. ; Zdasiuk, G.
Volume
86
Issue
1
fYear
1986
fDate
31564
Firstpage
23
Lastpage
26
Abstract
A novel, monolithic, distributed amplifier has achieved a record gain of over 10 dB from 2-18 GHz. The design utilizes five quarter-micron gate length, cascode connected, FETs on epitaxial material . Circuit simulations predict over 10 dB gain from 2-30 GHz for an amplifier with seven active elements. Novel features of the design, fabrication and testing are discussed.
Keywords
Bandwidth; Circuit simulation; Circuit testing; Distributed amplifiers; FETs; Fabrication; Gain; Gallium arsenide; Laboratories; Noise figure;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1986.1114473
Filename
1114473
Link To Document