Title :
A W-Band Monolithic GaAs PIN Diode Switch
Author :
Nesbit, Gerald H. ; Wong, Danny W. ; Li, Danny ; Chen, James C.
Abstract :
A state-of-the-art performance has been achieved for a W-band monolithic single-pole-single-throw PIN diode switch. An insertion loss of less than 0.5 dB with return loss greater than 15 dB (transmission mode) and an isolation greater than 11 dB (isolation mode) have been measured over a 6 GHz bandwidth (80 to 86 GHz).
Keywords :
Bandwidth; Contact resistance; Forward contracts; Gallium arsenide; Millimeter wave radar; Millimeter wave technology; Ohmic contacts; Propagation losses; Switches; Switching circuits;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1986.1114478
