Title :
W-band GaAs MESFET Frequency Doubler
Author :
Geddes, J. ; Sokolov, V. ; Contolatis, A.
Abstract :
A monolithic W-band frequency doubler has been developed using submicron gate length GaAs MESFETs fabricated on ion implanted material. The frequency doubler provides a power output of over 4.0 mW at 94 GHz with an input drive of 70 mW at 47 GHz. To of a MESFET our knowledge this is the first report frequency doubler operating at W-band.
Keywords :
Circuit simulation; FETs; Frequency; Gallium arsenide; HEMTs; Impedance matching; MESFETs; MODFETs; Oscillators; Varactors;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1987.1114504
