Title :
Ka-Band GaAs Power FETs
Author :
Yong-Hoon Yun ; Taylor, G.C. ; Bechtle, D.S. ; Jolly, S.T. ; Liu, S.G. ; Camisa, R.L.
fDate :
May 31 1983-June 3 1983
Abstract :
Ka-band results using submicrometer gate length, air-bridged, soldered flip-chip GaAs power FETs in finline, ridge-waveguide circuits are reported. Conventional photolithography was used to fabricate FETs with submicrometer gate lengths by using the undercut associated with chemical etching. At 35 GHz an output power of 91 mW at 3 dB gain and 4.5% efficiency was measured.
Keywords :
Chemicals; Circuits; Etching; FETs; Finline; Gain; Gallium arsenide; Lithography; Power generation; Power measurement;
Conference_Titel :
Microwave Symposium Digest, 1983 IEEE MTT-S International
Conference_Location :
Boston, MA, USA
DOI :
10.1109/MWSYM.1983.1130835
