Title :
K/sub a/-Band Monolithic GaAs Power FET Amplifiers
Author :
Hung, H.-L.A. ; Ezzeddine, A. ; Holdeman, L.B. ; Phelleps, F.R. ; Allison, J.F. ; Cornfeld, A.B. ; Smith, T. ; Huang, H.C.
fDate :
May 9 1975-June 11 1987
Abstract :
GaAs power MMIC amplifiers with an optimized FET structure operating at K/sub a/-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mW. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mW at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of MMICs with on-chip bias and DC blocking at K/sub a/-band.
Keywords :
Capacitors; FETs; Fingers; Gain; Gallium arsenide; Laboratories; Millimeter wave circuits; Millimeter wave technology; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132332
