Title :
A 2-20 GHz, High-Gain, Monolithic HEMT Distributed Amplifier
Author :
Nishimoto, C. ; LaRue, R. ; Bandy, S. ; Day, M. ; Eckstein, J. ; Webb, C. ; Yuen, C. ; Zdasiuk, G.
fDate :
May 9 1975-June 11 1987
Abstract :
A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved mid-band (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.
Keywords :
Circuit synthesis; Distributed amplifiers; Equivalent circuits; Gain; Gallium arsenide; HEMTs; MESFETs; MODFETs; Noise figure; Semiconductor process modeling;
Conference_Titel :
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location :
Palo Alto, CA, USA
DOI :
10.1109/MWSYM.1987.1132350
