• DocumentCode
    385990
  • Title

    A 2-20 GHz, High-Gain, Monolithic HEMT Distributed Amplifier

  • Author

    Nishimoto, C. ; LaRue, R. ; Bandy, S. ; Day, M. ; Eckstein, J. ; Webb, C. ; Yuen, C. ; Zdasiuk, G.

  • Volume
    1
  • fYear
    1987
  • fDate
    May 9 1975-June 11 1987
  • Firstpage
    155
  • Lastpage
    158
  • Abstract
    A low-noise 2-20 GHz monolithic distributed amplifier utilizing 0.3-micron gate-length HEMT devices has achieved 11-dB +- 0.5 dB of gain. This represents the highest gain reported for a distributed amplifier using single FET gain cells. A record low noise figure of 3 dB was achieved mid-band (7-12 GHz). The circuit design utilizes five HEMT transistors of varying width with gates fabricated by E-beam lithography.
  • Keywords
    Circuit synthesis; Distributed amplifiers; Equivalent circuits; Gain; Gallium arsenide; HEMTs; MESFETs; MODFETs; Noise figure; Semiconductor process modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1987 IEEE MTT-S International
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1987.1132350
  • Filename
    1132350
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=385990