DocumentCode
385997
Title
A Low-Noise L-Band Dielectric Resonator Stabilized Microstrip Oscillator
Author
Niehenke, E.C. ; Green, P.A.
Volume
1
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
193
Lastpage
196
Abstract
Design and performance of a unique microstrip L-band bipolar transistor dielectric resonator stabilized oscillator (DRO) is described which achieves ultralow single-sideband phase noise (-163 dBc/Hz at 100 kHz offset frequency), low I/f noise corner frequency of 12 kHz, with near-constant frequency (1280 +- 0.06 MHz) and power (12.55 +- 0.15 dBm) over -50° to 75°C. Circuit details to minimize noise as well as transistor selection criteria and measurements are presented. Back-to-back varactors provide 350 kHz electronic tuning range for phase-locking applications without any increase of noise.
Keywords
Bipolar transistors; Circuit noise; Dielectrics; Frequency; L-band; Microstrip resonators; Noise measurement; Oscillators; Phase noise; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132360
Filename
1132360
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