Title :
Mitigation of Total Dose Performance Degradation in an 8–18 GHz SiGe Reconfigurable Receiver
Author :
Howard, Duane C. ; Cardoso, Adilson S. ; Fleetwood, Zachary E. ; Lourenco, Nelson E. ; England, Troy D. ; Saha, Prabir K. ; Shankar, Subramaniam ; Diestelhorst, Ryan M. ; En Xia Zhang ; Cher Xuan Zhang ; Paki-Amouzou, Pauline ; Cressler, John D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
An 8-18 GHz receiver implemented in silicon-germanium (SiGe) BiCMOS technology is presented. The receiver is designed to enable built-in test (BIT) and consists of a low noise amplifier (LNA), an image-reject mixer, on-chip, automatic gain control (AGC), ring oscillator (RO) sources (used to provide test signals of a predefined amplitude), and digital-to-analog converters (DACs), used for DC bias control of the blocks. The voltage and current biases of both the LNA and the mixer circuit blocks are used as tuning knobs for radio frequency (RF) performance metrics to mitigate the negative effects of total ionizing dose (TID) radiation damage present in extreme environments such as space. Samples of the receiver die were exposed to 10 keV X-rays at 1, 3, and 6 Mrad( SiO2) doses. The BIT system was able to mitigate for TID damage in most cases, with improvements in the key RF metrics of gain, output third-order intercept point (OIP3), and noise figure (NF). The receiver was fabricated in an 0.18 μm SiGe BiCMOS process technology with a peak fT of 150 GHz and nominally consumes 241-243 mA from a 4 V supply.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; automatic gain control; built-in self test; circuit tuning; digital-analogue conversion; low noise amplifiers; microwave integrated circuits; microwave receivers; mixers (circuits); radiation effects; AGC; BIT system; DAC; DC bias control; LNA; NF; OIP3; RF performance metric; RO; SiGe; TID radiation damage; X-Ray; built-in test system; current 241 mA to 243 mA; digital-to-analog converter; electron volt energy 10 keV; frequency 150 GHz; frequency 8 GHz to 18 GHz; image-reject mixer; low noise amplifier; mixer circuit block; noise figure; on-chip automatic gain control; output third-order intercept point; radiofrequency performance metric; receiver die; reconfigurable receiver; ring oscillator; silicon-germanium BiCMOS technology; size 0.18 mum; total dose performance degradation mitigation; total ionizing dose damage; tuning knob; voltage 4 V; BiCMOS integrated circuits; Built-in self-test; Degradation; Integrated circuit testing; MIMICs; Receivers; Silicon germanium; BiCMOS integrated circuits; Built-in self-test; Integrated circuit testing; MIMICs; Silicon germanium; System-on-chip;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2014.2364580