Advances in vertical-cavity and widely-tunable lasers using InP-based PIC technology

Author

Coldren, Larry A.

Author_Institution

California Univ., Santa Barbara, CA, USA

Volume

1

fYear

2002

fDate

2002

Firstpage

5

Abstract

Summary form only given. This paper reviews some recent developments in two rather different laser examples based upon two somewhat different alloy systems lattice-matched to InP. The quaternary materials systems are chosen to provide more or less optimal device characteristics in both cases. The first example is a lattice-matched vertical-cavity surface-emitting laser (VCSEL) that can be created to operate at any wavelength within the entire 1300-1600 nm range. The second example actually includes two versions of a photonic integrated circuit technology to generate widely-tunable sampled-grating lasers integrated with amplifiers (SOAs) and modulators.

Keywords

III-V semiconductors; indium compounds; integrated optics; laser tuning; quantum well lasers; semiconductor optical amplifiers; semiconductor quantum wells; surface emitting lasers; 1300 to 1600 nm; AlGaAsSb; AlGaAsSb DBR mirrors; AlGaInAs; AlGaInAs quantum-well active regions; InGaAsP-InP; InGaAsP/InP alloys; InP; InP-based PIC technology; SOAs; VCSEL; buried rib structure; lattice-matched vertical-cavity surface-emitting laser; modulators; n-InP intracavity contacts; optimal device characteristics; photonic integrated circuit technology; quantum-well intermixing technique; sampled-grating lasers; vertical-cavity lasers; widely-tunable lasers; Apertures; Etching; Indium phosphide; Optical fiber communication; Optical materials; Photonic band gap; Quantum well devices; Quantum well lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1133890

Filename

1133890