DocumentCode
386075
Title
Modulation characteristics of high-speed tunnel injection In0.4Ga0.6As quantum dot lasers
Author
Pradhan, S. ; Ghosh, S. ; Bhattacharya, P.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
1
fYear
2002
fDate
2002
Firstpage
27
Abstract
Summary form only given. We have recently demonstrated higher small-signal modulation bandwidth (15 GHz) at room temperature in single mode InGaAs/GaAs quantum dot lasers in which electrons are injected to the lasing ground state of the dots by tunneling. We report here the room-temperature small- and large-signal modulation characteristics of tunnel injection quantum dot lasers. The devices are characterized by high quantum efficiency, very large modulation bandwidth and very small chirp and α-factor. The tunnel injection quantum dot laser heterostructures were grown by molecular beam epitaxy.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; optical modulation; quantum dot lasers; semiconductor quantum dots; tunnelling; waveguide lasers; α-factor; Auger recombination; In0.4Ga0.6As; high quantum efficiency; high-speed tunnel injection In0.4Ga0.6As quantum dot lasers; lasing ground state; linewidth enhancement factor; modulation characteristics; molecular beam epitaxy; room-temperature large-signal modulation characteristics; room-temperature small-signal modulation characteristics; single-mode ridge waveguide lasers; small-signal modulation bandwidth; very small chirp; Bandwidth; Chirp modulation; Electrons; Gallium arsenide; Indium gallium arsenide; Land surface temperature; Laser modes; Quantum dot lasers; Stationary state; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
ISSN
1092-8081
Print_ISBN
0-7803-7500-9
Type
conf
DOI
10.1109/LEOS.2002.1133901
Filename
1133901
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