Title :
AlGaAs/InGaAs 980 nm slab-coupled semiconductor lasers with single-spatial, large diameter mode
Author :
Huang, Robin K. ; Donnelly, Joseph P. ; Walpole, James N. ; Missaggia, Leo J. ; Harris, Christopher T. ; Bailey, Robert J. ; Plant, Jason ; Mull, Daniel E. ; Goodhue, William T. ; Turner, George W.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
We recently proposed a new class of semiconductor diode laser, the slab-coupled optical waveguide laser (SCOWL) that offers several advantages for single-spatial mode, high-output power devices. Mode filtering due to slab coupling of higher-order modes allows for a much larger single mode and a lower density at the facets, and the low loss permits die construction of long devices that reduce beat dissipation in the device at high power operation. In addition, SCOWL devices can be designed such that the spatial mode profile is nearly circular, allowing for high-coupling efficiency butt coupling (without the use of lenses) to single-mode fibers.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser modes; laser transitions; semiconductor lasers; waveguide lasers; 980 nm; AlGaAs-InGaAs; AlGaAs/InGaAs 980 nm slab-coupled semiconductor lasers; beat dissipation; high coupling efficiency; high power operation; laser facets; low loss; mode filtering; semiconductor diode laser; single-spatial large diameter mode; slab-coupled optical waveguide laser; spatial mode profile; Indium gallium arsenide; Laser modes; Optical devices; Optical filters; Optical waveguides; Power lasers; Semiconductor diodes; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1133934