Title :
High-frequency properties of 1.3 μm and 1.55 μm electro-absorption modulators integrated with DFB lasers based on identical MQW-double stack active layer
Author :
Stegmueller, Bernhard ; Hanke, Christian
Author_Institution :
Corporate Res. Photonics, Infineon Technol., Munich, Germany
Abstract :
We report on the comparison of the small signal modulation performance of 1.55μm and 1.3μm-devices. The novel integration scheme provides the option for a very simple monolithic integration of monitor diodes and optical amplifiers. Therefore the modulation characteristics of integrated 1.3μm-EAMs operating in the receiver mode have been investigated. Finally we will report on optical amplification characteristics of integrated EAMs operating as an optical amplifier.
Keywords :
distributed feedback lasers; electro-optical modulation; electroabsorption; integrated optoelectronics; monitoring; optical communication equipment; quantum well lasers; ridge waveguides; semiconductor quantum wells; waveguide lasers; 1.3 micron; 1.55 micron; DFB lasers; MQW lasers; electro-absorption modulators; high-frequency properties; identical MQW-double stack active layer; integrated EAMs; integrated optics; modulation characteristics; monitor diodes; monolithic integration; optical amplification characteristics; optical amplifier; optical amplifiers; small signal modulation performance; Diodes; Integrated optics; Monitoring; Monolithic integrated circuits; Optical amplifiers; Optical modulation; Optical receivers; Quantum well devices; Semiconductor optical amplifiers; Stimulated emission;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1133945
