Title :
The role of drift leakage in GaN/(x5)InGaN QW-LEDs emitting at 480nm
Author :
Pope, I.A. ; Smowton, P.M. ; Blood, P. ; Thomson, J.D. ; Kappers, M.
Author_Institution :
Dept. of Phys. & Astron., Cardiff Univ., UK
Abstract :
The radiative efficiency is critical in applications and it is therefore necessary to have a good understanding of the factors which determine this in GaN based LEDs. To this end we have studied light output versus current characteristics as a function of temperature to separate out the relevant physical processes. We have measured the pulsed light-current characteristics of GaN/(x5)InGaN quantum well (QW) LEDs as a function of temperature using a low duty cycle to avoid self-heating.
Keywords :
III-V semiconductors; current density; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; thermo-optical effects; 480 nm; GaN-InGaN; GaN/(x5)InGaN QW-LEDs; drift leakage; low duty cycle; physical processes; pulsed light-current characteristics; radiative efficiency; Blood; Electrons; Extraterrestrial measurements; Gallium nitride; Leakage current; Light emitting diodes; Pulse measurements; Radiative recombination; Spontaneous emission; Temperature distribution;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1133978
