The role of drift leakage in GaN/(x5)InGaN QW-LEDs emitting at 480nm

Author

Pope, I.A. ; Smowton, P.M. ; Blood, P. ; Thomson, J.D. ; Kappers, M.

Author_Institution

Dept. of Phys. & Astron., Cardiff Univ., UK

Volume

1

fYear

2002

fDate

2002

Firstpage

163

Abstract

The radiative efficiency is critical in applications and it is therefore necessary to have a good understanding of the factors which determine this in GaN based LEDs. To this end we have studied light output versus current characteristics as a function of temperature to separate out the relevant physical processes. We have measured the pulsed light-current characteristics of GaN/(x5)InGaN quantum well (QW) LEDs as a function of temperature using a low duty cycle to avoid self-heating.

Keywords

III-V semiconductors; current density; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; thermo-optical effects; 480 nm; GaN-InGaN; GaN/(x5)InGaN QW-LEDs; drift leakage; low duty cycle; physical processes; pulsed light-current characteristics; radiative efficiency; Blood; Electrons; Extraterrestrial measurements; Gallium nitride; Leakage current; Light emitting diodes; Pulse measurements; Radiative recombination; Spontaneous emission; Temperature distribution;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE

ISSN

1092-8081

Print_ISBN

0-7803-7500-9

Type

conf

DOI

10.1109/LEOS.2002.1133978

Filename

1133978