Title :
Photonic crystal lasers and related functional devices
Author :
Noda, Susumu ; Imada, Masahiuo
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Abstract :
Summary form only given. Recently, we have reported novel lasers based on two-dimensional (2D) photonic crystals or 2D periodic structures. Due to the two-dimensionality of such devices, the Bragg diffraction that occurs is multi-directional. Such multi-directional Bragg diffraction can yield coupling mechanisms unattainable using traditional DFB lasers, leading to control of the lasing mode over a large 2D area, which may have various important applications such as high-power lasers or surface-emitting lasers with very narrow divergence angles. We created such a device with a 2D photonic crystal in which we integrated two wafers (A and B) using a wafer-fusion technique. Wafer A has an InGaAsP/InP multiple quantum well active layer (λ= 1.3 μm) grown on a p-type InP substrate. Wafer B features a square lattice structure on an n-type InP substrate. We have found that the polarization of the laser can be controlled by unit cell structure design.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; laser modes; photonic crystals; quantum well lasers; surface emitting lasers; wafer bonding; 1.3 micron; 2D coupling mechanisms; 2D photonic crystal; DFB lasers; InGaAsP-InP; InGaAsP/InP MQW active layer; InP; distributed feedback; laser polarization control; lasing mode control; multi-directional Bragg diffraction; n-type InP substrate; p-type InP substrate; photonic crystal lasers; second-order distributed feedback effect; square lattice structure; surface-emitting laser; unit cell structure design; wafer-fusion technique; Diffraction; Indium phosphide; Laser modes; Lattices; Optical control; Optical coupling; Periodic structures; Photonic crystals; Quantum well lasers; Surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1134005