Title :
The 40 Gbit/s optical transceiver using monolithic InP and SiGe ICs
Author :
Takeyari, Ryoji ; Watanabe, Keiki ; Akashi, Mitsuo
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A 40-Gbit/s transceiver based on high-performance ICs - using compound semiconductors and SiGe HBTs- was developed. The power consumption and size of the transceiver were reduced by development of electron devices.
Keywords :
III-V semiconductors; bipolar integrated circuits; driver circuits; electro-optical modulation; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; modules; multiplexing equipment; optical receivers; optical transmitters; transceivers; 40 Gbit/s; 40 Gbit/s optical transceiver; InP; SiGe; SiGe HBTs; SiGe ICs; compound semiconductors; high-performance ICs; monolithic InP; power consumption; transceiver size reduction; Clocks; Driver circuits; Electron devices; High speed optical techniques; Indium phosphide; Optical modulation; Optical receivers; Optical sensors; Optical transmitters; Transceivers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1134025
