Fast AlGaN metal-semiconductor-metal photodetectors grown on Si(111)

Metal-semiconductor-metal photodetectors have been fabricated on AlGaN grown on Si(111) by molecular beam epitaxy for solar-blind applications. A cutoff wavelength of 290 nm and an ultraviolet/visible contrast of more than three orders of magnitude are achieved. Time response measurements show fast exponential decays. With a minimum decay time of 150 ns. The photodetectors present responsivities that increase with bias, reaching 15 mA/W at 4 V bias.