Title :
1200 nm highly strained GaInAs/GaAs surface emitting lasers
Author :
Koyama, F. ; Miyamoto, T. ; Arai, M. ; Kondo, T.
Author_Institution :
Microsystem Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
Summary form only given. In this paper, we review our results on 1.2 μm GaInAs/GaAs VCSELs including their temperature lasing characteristics and wavelength engineering on patterned substrates.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; metropolitan area networks; optical fibre LAN; optical transmitters; quantum well lasers; semiconductor laser arrays; surface emitting lasers; thermo-optical effects; 1200 nm; GaInAs-GaAs; GaInAs/GaAs VCSELs; highly strained GaInAs/GaAs surface emitting lasers; local area networks; metro area networks; optical transmitters; patterned substrates; temperature lasing characteristics; wavelength engineering; Data communication; Electrons; Gallium arsenide; Laser modes; MOCVD; Optical fiber polarization; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1134032
