• DocumentCode
    3861932
  • Title

    YBCO superconducting thin films prepared by vacuum coevaporation without post treatment in oxygen

  • Author

    S. Chromik;V. Strbik;S. Benacka;J. Levarsky;J. Sith;A. Plecenik;S. Gazi;V. Smatko;J. Schilder

  • Author_Institution
    Inst. of Electr. Eng. of Electro-Phys. Res. Centre, Slovak Acad. of Sci., Bratislava, Czechoslovakia
  • Volume
    25
  • Issue
    2
  • fYear
    1989
  • Firstpage
    2484
  • Lastpage
    2486
  • Abstract
    Results on low-temperature preparation of superconducting thin films of YBa/sub 2/Cu/sub 3/O/sub x/ are presented. YBCO thin films of 0.5-1.0- mu m thickness were prepared by vacuum codeposition of Y, BaO, and Cu onto both polycrystalline and single-crystal Al/sub 2/O/sub 3/, MgO, and SrTiO/sub 3/ and on Si+SrTiO/sub 3/ and Si+SiO/sub 2/ substrates. The temperature of the substrates was 550-580 degrees C and the partial oxygen pressure in the vacuum chamber was 10/sup -2/ Pa. The preparation of in situ superconducting thin films was successful with all substrates. Maximum critical temperature at zero resistance was T/sub ce/=85 K, the onset critical temperature T/sub con/ being from 90 to 95 K. The authors believe that T/sub con/ represents the maximal critical temperature of grains. Thus, the synthesis of superconducting granules with high T/sub c/ is possible even at a relatively low temperature during the deposition. On the other hand, the zero-resistance critical temperature T/sub ce/ characterizes the intercrystalline boundaries with electrical properties sensitive to diffusion processes from substrate or surrounding atmosphere. Additional oxidation of films (thermal or plasmatic) does not much affect T/sub ce/ near 85 K.
  • Keywords
    "Yttrium barium copper oxide","Superconducting thin films","Oxygen","Plasma temperature","Substrates","Superconducting films","Transistors","Superconducting transition temperature","Cooling","Superconducting devices"
  • Journal_Title
    IEEE Transactions on Magnetics
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/20.92812
  • Filename
    92812