DocumentCode
3861938
Title
Temperature and thickness dependence of steam oxidation of AlAs in cylindrical mesa structures
Author
M. Osinski;T. Svimonishvili;G.A. Smolyakov;V.A. Smagley;P. Mackowiak;W. Nakwaski
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume
13
Issue
7
fYear
2001
Firstpage
687
Lastpage
689
Abstract
The Deal-Grove model of thermal oxidation kinetics is adapted to cylindrically symmetric mesa structures and applied to study steam oxidation of AlAs. Oxidation process parameters are extracted from available experimental data as functions of temperature and the AlAs layer thickness. The oxidation rate is found to be very sensitive not only to temperature, but also to the oxidation front position inside the mesa. The oxidation rate slows down as the oxidation front moves into the mesa, reaches a minimum, and then accelerates at the final stages of the oxidation process. Complex nonmonotonic dependence of the oxidation process on layer thickness is also revealed.
Keywords
"Temperature dependence","Oxidation","Semiconductor process modeling","Vertical cavity surface emitting lasers","Surface emitting lasers","Laser modes","Semiconductor lasers","Kinetic theory","Temperature sensors","Optical device fabrication"
Journal_Title
IEEE Photonics Technology Letters
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.930415
Filename
930415
Link To Document