Low temperature deposition of hafnium silicate gate dielectrics for TFTs on plastic substrates

Summary form only given. Hafnium silicate (HfSi_xO_y) is being studied as a potential candidate material to replace SiO₂ as the gate dielectric in scaled silicon transistors due to its relatively high dielectric constant and high thermal stability. The dielectric constant of HfSi_xO_y is ∼8-15, depending on composition, which is 2-4 times higher than SiO₂. In this paper we describe the formation and characterization of hafnium silicate by UV/O₃ oxidation of hafnium silicide as a potential gate dielectric candidate for high performance thin-film transistors on plastic substrates.