• DocumentCode
    3862067
  • Title

    Heat-source distribution in etched-well surface-emitting semiconductor lasers

  • Author

    W. Nakwaski;M. Osinski

  • Author_Institution
    Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
  • Volume
    3
  • Issue
    11
  • fYear
    1991
  • Firstpage
    979
  • Lastpage
    981
  • Abstract
    The authors report on the development of a comprehensive self-consistent thermal-electrical model of etched-well vertical-cavity surface-emitting lasers. The analysis provides valuable insight into distribution of heat sources in these devices. Two-dimensional current- and heat-spreading analysis is used to determine in a self-consistent manner a realistic distribution of heat sources in etched-well vertical-cavity surface-emitting lasers. Strong nonuniformities of heat-source and temperature distributions are revealed. The relative contributions of various heat sources are evaluated. The Joule heating of the p-AlGaAs cladding layer is identified as a major cause of intense heating above threshold.
  • Keywords
    "Surface emitting lasers","Etching","Semiconductor lasers","Vertical cavity surface emitting lasers","Indium phosphide","Fiber lasers","Quantum well lasers","Gallium arsenide","Heating","Optical materials"
  • Journal_Title
    IEEE Photonics Technology Letters
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/68.97833
  • Filename
    97833