DocumentCode
3862067
Title
Heat-source distribution in etched-well surface-emitting semiconductor lasers
Author
W. Nakwaski;M. Osinski
Author_Institution
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Volume
3
Issue
11
fYear
1991
Firstpage
979
Lastpage
981
Abstract
The authors report on the development of a comprehensive self-consistent thermal-electrical model of etched-well vertical-cavity surface-emitting lasers. The analysis provides valuable insight into distribution of heat sources in these devices. Two-dimensional current- and heat-spreading analysis is used to determine in a self-consistent manner a realistic distribution of heat sources in etched-well vertical-cavity surface-emitting lasers. Strong nonuniformities of heat-source and temperature distributions are revealed. The relative contributions of various heat sources are evaluated. The Joule heating of the p-AlGaAs cladding layer is identified as a major cause of intense heating above threshold.
Keywords
"Surface emitting lasers","Etching","Semiconductor lasers","Vertical cavity surface emitting lasers","Indium phosphide","Fiber lasers","Quantum well lasers","Gallium arsenide","Heating","Optical materials"
Journal_Title
IEEE Photonics Technology Letters
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/68.97833
Filename
97833
Link To Document