Title :
A 0.5W, 850nm AlxGa1-xAs VECSEL with intra-cavity silicon carbide heat spreader
Author :
Hastie, J.E. ; Jeon, C.W. ; Burns, D. ; Hopkins, J.-M. ; Calvez, S. ; Abramb, R. ; Dawson, M.D.
Author_Institution :
Dept. of Phys. & Appl. Phys., Strathclyde Univ., Glasgow, UK
Abstract :
A comparison of the wavelength shift of the vertical external-cavity surface-emitting laser (VECSEL) spectrum with increasing pump power reveals silicon carbide to be a far superior heat spreader material to previously used sapphire. We have demonstrated 0.5W with no rollover from a GaAs VECSEL by utilising an intra-cavity silicon carbide heat spreader. We believe that with increased pump power, the use of silicon carbide heat spreaders will provide a useful expedient to extend the available output power of VECSEL systems.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser accessories; laser cavity resonators; laser transitions; optical pumping; quantum well lasers; surface emitting lasers; 0.5 W; 850 nm; AlxGa1-xAs; GaAs; SiC; VECSEL; available output power; heat spreader material; intra-cavity silicon carbide heat spreader; pump power; silicon carbide; vertical external-cavity surface-emitting laser spectrum; wavelength shift; Gallium arsenide; Heat pumps; Laser excitation; Optical materials; Power lasers; Pump lasers; Silicon carbide; Surface emitting lasers; Surface waves; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society, 2002. LEOS 2002. The 15th Annual Meeting of the IEEE
Print_ISBN :
0-7803-7500-9
DOI :
10.1109/LEOS.2002.1134063
