DocumentCode
3862329
Title
Additive Phase Noise in Linear and High-Efficiency X-Band Power Amplifiers
Author
Jason Breitbarth;Srdjan Pajic;Narisi Wang;Zoya Popovic
Author_Institution
School of Electrical and Computer Engineering, University of Colorado, Boulder, CO. Email: jason.breitbarth@colorado.edu
fYear
2006
fDate
6/6/2016 12:00:00 AM
Firstpage
1871
Lastpage
1874
Abstract
This paper compares additive (residual) phase noise of linear and highly saturated high-efficiency MESFET and HBT 10 GHz power amplifiers (PA). A custom discriminator measurement system is developed to characterize the PAs and exhibits a phase noise floor of -164dBc/Hz at 10 kHz offset for a 10 GHz fundamental. The additive phase noise measurements show a phase noise of -120dBc@1kHz for the class-E MESFET PA, a roughly 10-dB increase when compared to the class-A PA with the same device. The HBT amplifier exhibited nearly the same phase noise in class-E and linear class-A
Keywords
"Additive noise","Phase noise","High power amplifiers","Switches","MESFETs","Heterojunction bipolar transistors","1f noise","Capacitance","Voltage","Phase measurement"
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 2006. IEEE MTT-S International
ISSN
0149-645X
Print_ISBN
0-7803-9541-7
Type
conf
DOI
10.1109/MWSYM.2006.249779
Filename
4015321
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