Title :
Additive Phase Noise in Linear and High-Efficiency X-Band Power Amplifiers
Author :
Jason Breitbarth;Srdjan Pajic;Narisi Wang;Zoya Popovic
Author_Institution :
School of Electrical and Computer Engineering, University of Colorado, Boulder, CO. Email: jason.breitbarth@colorado.edu
fDate :
6/6/2016 12:00:00 AM
Abstract :
This paper compares additive (residual) phase noise of linear and highly saturated high-efficiency MESFET and HBT 10 GHz power amplifiers (PA). A custom discriminator measurement system is developed to characterize the PAs and exhibits a phase noise floor of -164dBc/Hz at 10 kHz offset for a 10 GHz fundamental. The additive phase noise measurements show a phase noise of -120dBc@1kHz for the class-E MESFET PA, a roughly 10-dB increase when compared to the class-A PA with the same device. The HBT amplifier exhibited nearly the same phase noise in class-E and linear class-A
Keywords :
"Additive noise","Phase noise","High power amplifiers","Switches","MESFETs","Heterojunction bipolar transistors","1f noise","Capacitance","Voltage","Phase measurement"
Conference_Titel :
Microwave Symposium Digest, 2006. IEEE MTT-S International
Print_ISBN :
0-7803-9541-7
DOI :
10.1109/MWSYM.2006.249779
