DocumentCode :
3862899
Title :
Probing thermal evanescent waves on dielectric surfaces
Author :
Yusuke Kajihara;Takafumi Yokoyama;Kuan-Ting Lin;Sunmi Kim
Author_Institution :
Institute of Industrial Science, The University of Tokyo, Komaba 4-6-1, Meguro-ku, Tokyo, 153-8505, Japan
fYear :
2015
Firstpage :
1
Lastpage :
2
Abstract :
Our passive near-field microscope probes thermal evanescent waves due to local phenomena on material´s surface. With the microscope, we study dielectric samples since they have surface phonon resonances whose resonance wavelengths are very close to our detection wavelength. From the results, GaAs, SiC, and AlN show reasonable signals due to thermal fluctuations, whereas GaN show very unique characteristics. In this report, we show and discuss the results.
Keywords :
"Gallium nitride","Surface waves","Silicon carbide","Gallium arsenide","Aluminum nitride","III-V semiconductor materials","Probes"
Publisher :
ieee
Conference_Titel :
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN :
2162-2027
Electronic_ISBN :
2162-2035
Type :
conf
DOI :
10.1109/IRMMW-THz.2015.7327680
Filename :
7327680
Link To Document :
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