Photoconductive antennas based on low temperature grown GaAs on silicon substrates for broadband terahertz generation and detection

Summary form only given. We present investigations of photoconductive antennas (PCA) based on low temperature grown GaAs (LT GaAs) on silicon substrates for terahertz (THz) detection and generation. The PCAs consist of 2 μm thick layers of LT GaAs bonded on a high resistivity silicon substrate in order to reduce the intrinsic absorption losses around 8 THz due to a strong phonon resonance in GaAs. Using 20 fs long pump pulses around 800 nm and dipole antennas with dipole length between 20 μm and 60 μm a maximum bandwidth above 10 THz and a maximum dynamic range exceeding 90 dB at 0.5 THz were obtained. The average output power was measured with a calibrated detector to be 5 μW at a repetition rate of 80 MHz.