• DocumentCode
    3863019
  • Title

    High speed and high responsivity dual-absorption InGaAs/InP UTC-PDs

  • Author

    Feng Liu; Yongqing Huang; Chao Kang; Qingtao Chen; Xiaofeng Duan; Xiaomin Ren

  • Author_Institution
    State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, China
  • fYear
    2015
  • fDate
    6/15/2016 12:00:00 AM
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A new back-illuminated uni-traveling-carrier photodiode (UTC-PD) is designed for long-wavelength applications in this paper. This device design incorporates dual absorption regions with conventional UTC-PDs, simultaneously by adopting a cliff layer in the collection layer to obtain high efficiency and high speed. Theoretical and simulation study indicate that the responsivity of the 14 μm2 active area device is as high as 0.33 A/W, and a 3-dB bandwidth up to 52.2 GHz at 2V reverse bias. This represents an improvement of 70% over the bandwidth-responsivity product achievable in conventional back-illuminated uni-traveling-carrier photodiode.
  • Keywords
    "Absorption","Indium gallium arsenide","Indium phosphide","III-V semiconductor materials","Bandwidth","Doping","Photonics"
  • Publisher
    ieee
  • Conference_Titel
    Opto-Electronics and Communications Conference (OECC), 2015
  • Electronic_ISBN
    2166-8892
  • Type

    conf

  • DOI
    10.1109/OECC.2015.7340304
  • Filename
    7340304
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3863019