DocumentCode :
3863026
Title :
Black silicon as absorber for near-infrared photo-thermal conversion
Author :
Shi-Qiu Cheng; Bin Cai; Yi-Ming Zhu
Author_Institution :
Shanghai Key Lab of Modern Optical System and Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, 200093, China
fYear :
2015
fDate :
6/15/2016 12:00:00 AM
Firstpage :
1
Lastpage :
3
Abstract :
By a metal catalytic chemical etching method we obtained “black silicon” with very high absorption efficiency from ultraviolet to near infrared range. The characteristic of the black silicon as absorber for photo-thermal-electricity conversion was investigated.
Keywords :
"Silicon","Etching","Absorption","Chemicals","Metals","Optical device fabrication","Optical sensors"
Publisher :
ieee
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2015
Electronic_ISBN :
2166-8892
Type :
conf
DOI :
10.1109/OECC.2015.7340311
Filename :
7340311
Link To Document :
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