DocumentCode
3863026
Title
Black silicon as absorber for near-infrared photo-thermal conversion
Author
Shi-Qiu Cheng; Bin Cai; Yi-Ming Zhu
Author_Institution
Shanghai Key Lab of Modern Optical System and Engineering Research Center of Optical Instrument and System, Ministry of Education, University of Shanghai for Science and Technology, 200093, China
fYear
2015
fDate
6/15/2016 12:00:00 AM
Firstpage
1
Lastpage
3
Abstract
By a metal catalytic chemical etching method we obtained “black silicon” with very high absorption efficiency from ultraviolet to near infrared range. The characteristic of the black silicon as absorber for photo-thermal-electricity conversion was investigated.
Keywords
"Silicon","Etching","Absorption","Chemicals","Metals","Optical device fabrication","Optical sensors"
Publisher
ieee
Conference_Titel
Opto-Electronics and Communications Conference (OECC), 2015
Electronic_ISBN
2166-8892
Type
conf
DOI
10.1109/OECC.2015.7340311
Filename
7340311
Link To Document