Title :
TE-pass polarizer using metal vias for silicon-on-insulator platform
Author :
Humaira Zafar;Soha E. Yousuf;Anatol Khilo
Author_Institution :
Institute Center for Microsystems, Department of Electrical Engineering and Computer Science, Masdar Institute of Science and Technology, Abu Dhabi, United Arab Emirates
fDate :
6/15/2016 12:00:00 AM
Abstract :
A TE-pass polarizer that uses metal vias for absorption of TM light is proposed. A 100-micron device can achieve 20dB extinction ratio with 0.23dB insertion loss. The polarizer is compatible with standard silicon-on-insulator foundry processes.
Keywords :
"Insertion loss","Optical waveguides","Propagation losses","Metals","Silicon-on-insulator","Silicon photonics"
Conference_Titel :
Opto-Electronics and Communications Conference (OECC), 2015
Electronic_ISBN :
2166-8892
DOI :
10.1109/OECC.2015.7340333
