DocumentCode :
3863218
Title :
<200 nm Wafer-to-wafer overlay accuracy in wafer level Cu/SiO2 hybrid bonding for BSI CIS
Author :
B. Rebhan;M. Bernauer;T. Wagenleitner;M. Heilig;F. Kurz;S. Lhostis;E. Deloffre;A. Jouve;V. Balan;L. Chitu
Author_Institution :
EV Group, DI E. Thallner Stra?e 1, 4782 St. Florian/Inn, Austria
fYear :
2015
Firstpage :
1
Lastpage :
4
Abstract :
Sub 200 nm wafer-to-wafer (w2w) overlay accuracy on the entire 300 mm wafer was successfully demonstrated via wafer level Cu/SiO2 hybrid bonding. Cu bonding pads relevant for back-side illuminated (BSI) complementary metal oxide semiconductor (CMOS) image sensor (CIS) were used for the experiment. Further, a crucial component to improve the overlay accuracy, namely the overlay model which identifies systematic alignment errors, was described.
Keywords :
"Bonding","Surface treatment","Wafer bonding","Annealing","Rough surfaces","Surface roughness"
Publisher :
ieee
Conference_Titel :
Electronics Packaging and Technology Conference (EPTC), 2015 IEEE 17th
Type :
conf
DOI :
10.1109/EPTC.2015.7412403
Filename :
7412403
Link To Document :
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