Compact Modeling of a Magnetic Tunnel Junction—Part II: Tunneling Current Model

The potential application range of spintronic devices is wide. However, a few works were carried out in the field of compact modeling of such devices. The lack of compact models dramatically increases the design complexity of circuits using spintronic devices. In this paper, focus is made on magnetic tunnel junctions (MTJs). It is presented in a set of two papers: The first part deals with the magnetic aspects of the MTJ, whereas the second one covers the electrical aspects. In this part, the tunneling conduction across the MTJ is modeled using an analytical I-V equation, which is based on previous works on this topic and involves some assumptions that are discussed. The complete compact model is implemented in a very high speed integrated circuit (VHSIC) hardware description language analog mixed signal and includes magnetization aspects presented in the first part. The model requires 25 parameters (19 physical and 6 semiempirical parameters).