DocumentCode
3863863
Title
Close-space sublimation growth and characterization of ZnTe epitaxial thick film
Author
Jiawei Li;Gangqiang Zha;Yadong Xu;Shouzhi Xi;Yingrui Li;Rui Yang;Wanqi Jie
fYear
2015
Firstpage
1
Lastpage
2
Abstract
ZnTe epitaxial film with thickness of 200μm was grown on the GaAs substrate by close-space sublimation (CSS). The surface topography of ZnTe film was analyzed by SEM, and the evolution of growth pit was observed, which revealed the mechanism of epitaxial growth. The structure was analyzed by X-ray radiation diffraction (XRD) 9-29 scan and rotary Φ-scan, and the results suggested that the ZnTe thick film is epitaxial film. The crystalline quality of ZnTe thick film was characterized by X-ray rocking curve and Raman spectrum, and the results suggested that ZnTe epitaxial film obtained by CSS could be as a replacement of ZnTe single crystal, especially for thinner and larger requirement.
Keywords
"Epitaxial growth","Gallium arsenide","Substrates","Crystals","Surface treatment","X-ray scattering"
Publisher
ieee
Conference_Titel
Infrared, Millimeter, and Terahertz waves (IRMMW-THz), 2015 40th International Conference on
ISSN
2162-2027
Electronic_ISBN
2162-2035
Type
conf
DOI
10.1109/IRMMW-THz.2015.7327667
Filename
7327667
Link To Document