Title :
Heat-resistant Au-ZrBx-n-SiC 6H Schottky barriers
Author :
Boltovets, N.S. ; Ivanov, V.N. ; Rengevych, O.E.
Author_Institution :
Orion Sci. & Res. Inst., Kiev, Ukraine
Abstract :
We present the results of our research into morphological and electrical properties of ZrBx-n-SiC 6H and Au-ZrBx-n-SiC 6H surface-barrier structures. They were studied both before and after a 90 s rapid thermal annealing (RTA) in vacuum at the temperature T=1000°C. The ZrBx films were obtained using magnetron sputtering from pressed targets of stoichiometric composition. It was shown that the RTA changed neither contact layered structure nor the abrupt character of the interface, and the contact barrier properties were retained. For the initial (pre-RTA) samples the Schottky barrier height φB was 0.69-0.78 eV; post-RTA, it became 0.59-0.70 eV.
Keywords :
Schottky barriers; crystal morphology; gold; interface structure; rapid thermal annealing; silicon compounds; sputtered coatings; wide band gap semiconductors; zirconium compounds; 0.59 to 0.7 eV; 0.69 to 0.78 eV; 1000 C; 90 s; Au-ZrBr-SiC; RTA; Schottky barrier height; ZrB-SiC; ZrBx-n-SiC 6H surface-barrier structures; abrupt interface; annealing temperature; contact barrier properties; contact layered structure; electrical properties; heat-resistant Au-ZrBx-n-SiC 6H Schottky barriers; magnetron sputtering; morphological properties; pressed stoichiometric composition targets; rapid thermal annealing; Artificial intelligence; Electromagnetic heating; Helium; IEEE catalog; Materials science and technology; Organizing; Schottky barriers; Schottky diodes; Silicon carbide; Tungsten;
Conference_Titel :
Microwave and Telecommunication Technology, 2002. CriMiCo 2002. 12th International Conference
Print_ISBN :
966-7968-12-X
DOI :
10.1109/CRMICO.2002.1137188
