DocumentCode :
386806
Title :
Recent advances in semiconductor lasers
Author :
Rediker, R.
Author_Institution :
Massachusetts Institute of Technology, Lexington, MA, USA
Volume :
13
fYear :
1966
fDate :
21-25 March 1966
Firstpage :
1
Lastpage :
1
Abstract :
The threshold current for GaAs Diode lasers has been reduced at the higher temperatures and has led to higher external quantum efficiencies at these temperatures. Using new materials, laser action has been extended further in the infrared and has reached the 
atmospheric window. Diode lasers in which the laser action occurs in the bulk of the semiconductor are reported. Semiconductor lasers have been pumped with an electron beam.
atmospheric window. Diode lasers in which the laser action occurs in the bulk of the semiconductor are reported. Semiconductor lasers have been pumped with an electron beam.Keywords :
Diode lasers; Electron beams; Gallium arsenide; Laser excitation; Optical materials; Pump lasers; Semiconductor lasers; Semiconductor materials; Temperature; Threshold current;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
1958 IRE International Convention Record
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/IRECON.1965.1147513
Filename :
1147513
Link To Document :
