• DocumentCode
    386810
  • Title

    New trends in microelectronics fabrication technology-1965

  • Author

    Thornton, C.

  • Author_Institution
    Philco Corporation, Lansdale, PA, USA
  • Volume
    13
  • fYear
    1966
  • fDate
    21-25 March 1966
  • Firstpage
    53
  • Lastpage
    66
  • Abstract
    A number of significant new developments in silicon monolithic microcircuit fabrication technology have emerged during the past year. Of particular importance are improved thin-film over silicon components, methods for incorporating insulating and conducting layers within the semiconductor, localized epitaxial growth, ultra small geometry techniques, and stability improvements in planar devices. Advanced methods for economical packaging of complex microcircuitry, which eliminate the need for bonded wire connections to silicon chips, are also evolving. This paper describes these new developments and considers the extent to which microcircuit design will be affected. In particular, monolithic technology has been greatly extended, making it possible to fabricate circuits which had been considered to be beyond the limits of the technique.
  • Keywords
    Epitaxial growth; Fabrication; Geometry; Insulation; Microelectronics; Semiconductor device packaging; Semiconductor thin films; Silicon on insulator technology; Stability; Thin film devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    1958 IRE International Convention Record
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/IRECON.1965.1147521
  • Filename
    1147521