DocumentCode
386810
Title
New trends in microelectronics fabrication technology-1965
Author
Thornton, C.
Author_Institution
Philco Corporation, Lansdale, PA, USA
Volume
13
fYear
1966
fDate
21-25 March 1966
Firstpage
53
Lastpage
66
Abstract
A number of significant new developments in silicon monolithic microcircuit fabrication technology have emerged during the past year. Of particular importance are improved thin-film over silicon components, methods for incorporating insulating and conducting layers within the semiconductor, localized epitaxial growth, ultra small geometry techniques, and stability improvements in planar devices. Advanced methods for economical packaging of complex microcircuitry, which eliminate the need for bonded wire connections to silicon chips, are also evolving. This paper describes these new developments and considers the extent to which microcircuit design will be affected. In particular, monolithic technology has been greatly extended, making it possible to fabricate circuits which had been considered to be beyond the limits of the technique.
Keywords
Epitaxial growth; Fabrication; Geometry; Insulation; Microelectronics; Semiconductor device packaging; Semiconductor thin films; Silicon on insulator technology; Stability; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
1958 IRE International Convention Record
Conference_Location
New York, NY, USA
Type
conf
DOI
10.1109/IRECON.1965.1147521
Filename
1147521
Link To Document