• DocumentCode
    387009
  • Title

    Low Noise MESFETS for Ion Implanted GaAs MMICS

  • Author

    Gupta, A.K. ; Siu, D.P. ; Ip, K.T. ; Petersen, W.C.

  • Volume
    83
  • Issue
    1
  • fYear
    1983
  • fDate
    31 May-1 Jun 1983
  • Firstpage
    27
  • Lastpage
    30
  • Abstract
    Fabrication considerations for low noise FETs in ion implanted GaAs MMICS are presented. Processes that can deteriorate FET performance have been identified and some solutions proposed. Low noise MMIC FETs fabricated along these lines show good microwave performance through 18 GHz, approaching the performance available from similar discrete FETs. 0.8 µm gate length MMIC FETs with a noise figure of 2.9 dB and associated gain of 6.1 dB at 18 GHz have been fabricated. These devices are suitable for low noise applications in ion implanted GaAs MMICS.
  • Keywords
    Dielectrics; FETs; Fabrication; Gallium arsenide; MESFETs; MIM capacitors; MMICs; Metallization; Noise figure; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave and Millimeter-Wave Monolithic Circuits
  • Type

    conf

  • DOI
    10.1109/MCS.1983.1151035
  • Filename
    1151035
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=387009