DocumentCode
387010
Title
Transient Capless Annealing of Ion-Implanted PBN LEC GaAs for Monolithic Microwave Integrated Circuits
Author
Clarke, R.C. ; Eldridge, G.W. ; Wang, S.K. ; Valek, W.F.
Volume
83
Issue
1
fYear
1983
fDate
31 May-1 Jun 1983
Firstpage
31
Lastpage
35
Abstract
A method for high-temperature, capless activation of implanted gallium arsenide has been devised based on the recent availability of high-purity semi-insulating PBN LEC gallium arsenide both as implant host and stabilizing medium.
Keywords
Annealing; Gallium arsenide; Implants; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Production; Rough surfaces; Surface roughness; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter-Wave Monolithic Circuits
Type
conf
DOI
10.1109/MCS.1983.1151036
Filename
1151036
Link To Document