Title :
Transient Capless Annealing of Ion-Implanted PBN LEC GaAs for Monolithic Microwave Integrated Circuits
Author :
Clarke, R.C. ; Eldridge, G.W. ; Wang, S.K. ; Valek, W.F.
fDate :
31 May-1 Jun 1983
Abstract :
A method for high-temperature, capless activation of implanted gallium arsenide has been devised based on the recent availability of high-purity semi-insulating PBN LEC gallium arsenide both as implant host and stabilizing medium.
Keywords :
Annealing; Gallium arsenide; Implants; MMICs; Microwave integrated circuits; Monolithic integrated circuits; Production; Rough surfaces; Surface roughness; Temperature;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1983.1151036
