Title :
A New, Specifically Monolithic Approach to Microwave Power Amplifiers
Author :
PavIidis, D. ; Archambault, Y. ; Efthimerou, M. ; Kaminsky, D. ; Bert, A. ; Magarshack, J.
fDate :
31 May-1 Jun 1983
Abstract :
A new principle was used to build a GaAs MMIC. X-band Power Amplifier based on a modular tree design where the number of modules increase at each amplifying stage. First experimental data show 10 dB gain at the centre of the operation band (8 - 9 GHz).
Keywords :
Equivalent circuits; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance matching; MMICs; Microstrip; Microwave amplifiers; Power amplifiers;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
DOI :
10.1109/MCS.1983.1151042