DocumentCode :
387014
Title :
A New, Specifically Monolithic Approach to Microwave Power Amplifiers
Author :
PavIidis, D. ; Archambault, Y. ; Efthimerou, M. ; Kaminsky, D. ; Bert, A. ; Magarshack, J.
Volume :
83
Issue :
1
fYear :
1983
fDate :
31 May-1 Jun 1983
Firstpage :
54
Lastpage :
58
Abstract :
A new principle was used to build a GaAs MMIC. X-band Power Amplifier based on a modular tree design where the number of modules increase at each amplifying stage. First experimental data show 10 dB gain at the centre of the operation band (8 - 9 GHz).
Keywords :
Equivalent circuits; FETs; Frequency; Gallium arsenide; High power amplifiers; Impedance matching; MMICs; Microstrip; Microwave amplifiers; Power amplifiers;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
Type :
conf
DOI :
10.1109/MCS.1983.1151042
Filename :
1151042
Link To Document :
بازگشت