DocumentCode :
387018
Title :
GaAs Monolithic MICs for Direct Broadcast Satellite Receivers
Author :
Hori, Shigekazu ; Kamei, Kiyoho ; Shibata, Kiyoyasu ; Tatematsu, Mikio ; Mishima, Katsuhiko ; Okano, Susumu
Volume :
83
Issue :
1
fYear :
1983
fDate :
31 May-1 Jun 1983
Firstpage :
90
Lastpage :
95
Abstract :
A 12-GHz low-noise amplifier (LNA), a 1-GHz IF amplifier (IFA) and an 11-GHz dielectric resonator oscillator (DRO) have been developed for DBS home receiver applications by using GaAs MMIC (monolithic MIC) technology. Each MMIC chip contains FETs as active elements and self-biasing source resistors and bypass capacitors for single power supply operation. It also contains DC-block and RF-bypass capacitors. The three-stage LNA exhibits 3.4-dB noise figure and 19.5-dB gain over 11.7 GHz-12.2 GHz. The negative-feedback type three-stage IFA shows 3.9-dB noise figure and 23-dB gain over 0.5 GHz-1.5 GHz. The DRO gives 10-mW output power at 10.67 GHz with a frequency stability of 1.5 MHz over a temperature range from -40 to 80 degrees C. A DBS receiver incorporating these MMICs exhibits an overall noise figure of ≤ 4.0 dB for frequencies from 11.7 to 12.2 GHz.
Keywords :
Dielectrics; FETs; Frequency; Gallium arsenide; Low-noise amplifiers; MMICs; Microwave integrated circuits; Noise figure; Oscillators; Satellite broadcasting;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits
Type :
conf
DOI :
10.1109/MCS.1983.1151050
Filename :
1151050
Link To Document :
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