Title :
Subthreshold design considerations for insulated-gate field-effect transistors
Author_Institution :
IBM Corp., Essex Junction, VT, USA
Abstract :
A new subthreshold IGFET model, which includes dependence on gate, drain and substrate voltages for both long and short channels, will be described. Implications for circuit design will be discussed.
Keywords :
Annealing; Doping; Electrons; Equations; FETs; Insulation; Semiconductor process modeling; Solid state circuits; Substrates; Threshold voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1973 IEEE International
Conference_Location :
Philadelphia, PA, USA
DOI :
10.1109/ISSCC.1973.1155194
