• DocumentCode
    387031
  • Title

    HV silicon-gate MOS integrated circuit for driving piezoelectric tactile displays

  • Author

    Saraswat, Krishna ; Meindl, J.

  • Author_Institution
    Stanford University, Stanford, CA, USA
  • Volume
    XVII
  • fYear
    1974
  • fDate
    15-13 Feb. 1974
  • Firstpage
    164
  • Lastpage
    165
  • Abstract
    A 180-V Si-gate MOS transistor using standard MOS LSI technology and capable of driving piezoelectric tactile displays has been developed. A novel theory predicts accurately walkout of the transistor´s high-voltage junction breakdown.
  • Keywords
    Breakdown voltage; Displays; Electron traps; Fabrication; MOS integrated circuits; MOSFETs; Metalworking machines; Piezoelectric transducers; Threshold voltage; Voltage control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1974 IEEE International
  • Conference_Location
    Philadelphia, PA, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1974.1155282
  • Filename
    1155282
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=387031