Title :
DMOS experimental and theoretical study
Author :
Rodgers, T. ; Asai, Satoshi ; Pocha, M. ; Dutton, Rachael ; Meindl, J.
Author_Institution :
Stanford University, Stanford, CA, USA
Abstract :
An experimental and theoretical investigation of DMOS transistors with widely varying substrate doping and channel lengths has been performed. A simple two-transistor model, which includes velocity saturation was used to give insight into the physics of DMOS devices. A more complete model will be presented.
Keywords :
Circuit simulation; Design automation; Electrons; Logic; MOS devices; MOSFETs; Predictive models; Solid state circuits; Substrates; Voltage;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
DOI :
10.1109/ISSCC.1975.1155362
