DocumentCode
387042
Title
A new approach to bipolar LSI:C³L
Author
Peltier, A.
Author_Institution
Motorola Semiproducts Division, Mesa, AZ, USA
Volume
XVIII
fYear
1975
fDate
27426
Firstpage
168
Lastpage
169
Abstract
Low threshold Schottky diodes have been used to realize a single transistor NAND logic cell. By using PNP current source-load devices, a very dense, efficient, and high performance LSI logic has been obtained.
Keywords
Aluminum; Current supplies; Decoding; Etching; Large scale integration; Logic; Parasitic capacitance; Resistors; Schottky diodes; Titanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference. Digest of Technical Papers. 1975 IEEE International
Type
conf
DOI
10.1109/ISSCC.1975.1155432
Filename
1155432
Link To Document