• DocumentCode
    387054
  • Title

    A 1.4-million-element CCD image sensor

  • Author

    Stevens, E. ; Teh-Hsuang Lee ; Nicols, D. ; Anagnostopoulos, C. ; Berkey, B. ; Win Chang ; Kelly, T. ; Khosla, R. ; Losee, D. ; Tredwell, T.

  • Author_Institution
    Eastman Kodak Electronics Research Laboratories, Rochester, NY, USA
  • Volume
    XXX
  • fYear
    1987
  • fDate
    0-0 Feb. 1987
  • Firstpage
    114
  • Lastpage
    115
  • Abstract
    A 2/3" format 1.4 megapixel full-frame CCD image sensor with a cell size of 6.8\\times 6.8\\mu m, that achieves a quantum efficiency of 50% at 550nm, will be disclosed. Output-amplifier noise is 15rms electrons. Amplifier uses buried channel LDD NMOSFETs. Input-referred sensitivity is 15μV/electron over a 71MHz bandwidth. Device has been fabricated using a two-phase, two-level polysilicon process.
  • Keywords
    Charge coupled devices; Charge-coupled image sensors; Consumer electronics; Electrons; Image resolution; Image sensors; Optical sensors; Pixel; Solid state circuits; TV;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1987.1157224
  • Filename
    1157224
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=387054