• DocumentCode
    387058
  • Title

    A 120ns 4Mb CMOS EPROM

  • Author

    Atsumi, S. ; Tanaka, Shoji ; Saito, Sakuyoshi ; Ohtsuka, N. ; Matsukawa, N. ; Mori, Shinsuke ; Arai, Nobuyuki ; Kaneko, Yuya ; Yoshikawa, Kenichi ; Matsunaga, J. ; Iizuka, Tetsuya

  • Author_Institution
    Toshiba Semiconductor Device Engineering Lab, Kawasaki, Japan
  • Volume
    XXX
  • fYear
    1987
  • fDate
    0-0 Feb. 1987
  • Firstpage
    74
  • Lastpage
    75
  • Abstract
    A 512K×8b EPROM fabricated in 0.8μm, CMOS with a cell size of 9μm2and a chip size of 5.9×14.9mm2will be reported. The device programs at a rate of 10μs per byte, reads with an access time of 120ns and draws 10mA of active current.
  • Keywords
    Circuit testing; Costs; Delay effects; EPROM; Laser beam cutting; Laser modes; Memory; Microcomputers; Monitoring; Plastic packaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
  • Conference_Location
    New York, NY, USA
  • Type

    conf

  • DOI
    10.1109/ISSCC.1987.1157230
  • Filename
    1157230
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=387058