DocumentCode :
387061
Title :
A 512 × 512 element PtSi Schottky-barrier infrared image sensor
Author :
Kimata, M. ; Denda, M. ; Yutani, Naoki ; Iwade, Shuhei ; Tsubouchi, N.
Author_Institution :
Mitsubishi LSI Research and Development Laboratory, Hyogo, Japan
Volume :
XXX
fYear :
1987
fDate :
- Feb. 1987
Firstpage :
110
Lastpage :
111
Abstract :
An image sensor for thermal imaging in the 
m infrared band will be discussed. Device has a pixel size of 
m and a fill factor of 39% achieved by use of charge sweep vertical readout registers.
m infrared band will be discussed. Device has a pixel size of m and a fill factor of 39% achieved by use of charge sweep vertical readout registers.Keywords :
Artificial intelligence; Infrared detectors; Infrared image sensors; Physics; Pixel; Zinc compounds;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
Type :
conf
DOI :
10.1109/ISSCC.1987.1157233
Filename :
1157233
Link To Document :
