Title :
An 80ns address-date multiplex 1mb CMOS EPROM
Author :
Yoshida, Manabu ; Akaogi, T. ; Higuchi, Masanori ; Shirai, Keigo ; Tanaka, I.
Author_Institution :
Fujitsu MOS Memory and Process Divisions, Kawasaki, Japan
Abstract :
This report will cover an EPROM organized as 64K×16b. Precharging techniques achieved an access time of 80ns Light-shielded cells control switching of redundant word lines.
Keywords :
CMOS process; CMOS technology; Conducting materials; EPROM; Fuses; Manufacturing; Material storage; PROM; Transconductance; Transistors;
Conference_Titel :
Solid-State Circuits Conference. Digest of Technical Papers. 1987 IEEE International
Conference_Location :
New York, NY, USA
DOI :
10.1109/ISSCC.1987.1157235
