DocumentCode :
387194
Title :
Design of a shared buffer management scheme for ATM switches
Author :
Lin, C.S. ; Liu, B.D. ; Tang, Y.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fYear :
2002
fDate :
25-28 Sept. 2002
Firstpage :
261
Lastpage :
264
Abstract :
This paper presents a novel memory management scheme for a shared buffer ATM switch that features low cost, high throughput, and high memory utilization. The design approach is based on the dual-port RAM device which can improve the memory bandwidth and reduce the complex address control of the shared buffer. In addition, the proposed memory management scheme adopts a temporary-point approach to improve the conventional bubble elimination design. The temporary-point approach eliminates the bubble problem of the linked list chain, and also achieves double throughput performance compared with the conventional single-port RAM shared buffer architecture. The whole design was fabricated with the TSMC 0.35 μm SPQM CMOS process parameters under 3.3 V supply voltage. With a 256 cell shared buffer architecture, the measured results show that both the cell-writing process and cell-reading process of this chip worked in parallel with speeds up to 25 MHz.
Keywords :
B-ISDN; CMOS memory circuits; asynchronous transfer mode; buffer storage; integrated circuit design; integrated circuit measurement; random-access storage; shared memory systems; storage allocation; 0.35 micron; 25 MHz; 3.3 V; ATM switches; TSMC SPQM CMOS process parameters; broadband ISDN; bubble elimination design; cell-reading process; cell-writing process; complex address control; dual-port RAM device; linked list chain; memory bandwidth; memory management scheme; memory utilization; shared buffer ATM switch; shared buffer architecture; shared buffer management scheme design; single-port RAM shared buffer architecture; supply voltage; temporary-point approach; throughput; Asynchronous transfer mode; Bandwidth; CMOS process; Costs; Memory management; Random access memory; Read-write memory; Switches; Throughput; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
ASIC/SOC Conference, 2002. 15th Annual IEEE International
Print_ISBN :
0-7803-7494-0
Type :
conf
DOI :
10.1109/ASIC.2002.1158068
Filename :
1158068
Link To Document :
بازگشت