Title :
Investigation of strain effects on performance of high-speed Schottky-type photodetectors
Author :
Oh, Kyoung-Hwan ; Jo, Seong-June ; In, Soo-Kang ; Jun, Dong-Hwan ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., K-JIST, Gwangju, South Korea
Abstract :
PIN and Schottky photodetectors (PDs) having an InGaAs absorption layer are widely used for long distance optical communication. The speed of those PDs is generally limited by hole transition time in the absorption layer. This limit can be overcome by using a tensile-strain InxGa1-xAs (x<0.53) absorption layer. We fabricated and characterized Schottky-type PDs having a lattice-matched In0.53Ga0.47As absorption layer and a tensile-strained In0.48Ga0.52As absorption layer. Photocurrent impulse response of the tensile-strained InAlAs/In0.48Ga0.52As PD showed an improved FWHM of 13 ps, while that of the the lattice-matched InAlAs/In0.53Ga0.47As PD was 16 ps.
Keywords :
Schottky barriers; light absorption; optical communication equipment; photodetectors; photoluminescence; transient response; 13 ps; 16 ps; InAlAs-In0.48Ga0.52; InAlAs-In0.53Ga0.47As; InGaAs absorption layer; Schottky-type photodetectors; high-speed photodetector performance; hole transition time; lattice-matched absorption layer; long distance optical communication; photocurrent impulse response; strain effects; tensile-strain InxGa1-xAs absorption layer; Optical communication equipment; Optical propagation in absorbing media; Photodetectors; Photoluminescence; Schottky barriers; Transient response;
Conference_Titel :
Microwave Photonics, 2002. International Topical Meeting on
Print_ISBN :
4-88552-187-4
DOI :
10.1109/MWP.2002.1158884
